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NAND01GW3B2CN5E 数据手册 ( 数据表 ) - Numonyx -> Micron

NAND01GR3B2C image

零件编号
NAND01GW3B2CN5E

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page
67 Pages

File Size
1.5 MB

生产厂家
Numonyx
Numonyx -> Micron 

Description
   The NAND01G-B2C is a 1-Gbit device belonging to the NAND SLC large page family. The device operates with a 1.8 V or 3 V voltage supply. The size of a page is either 2112 bytes (2048 + 64 spare) or 1056 words (1024 + 32 spare) depending on whether the device has a x8 or x16 bus width.


FEATUREs
◾ NAND interface
   – x8 or x16 bus width
   – Multiplexed address/ data
   – Pinout compatibility for all densities
◾ Supply voltage: 1.8 V/3 V
◾ Page size
   – x8 device: (2048 + 64 spare) bytes
   – x16 device: (1024 + 32 spare) words
◾ Block size
   – x8 device: (128K + 4K spare) bytes
   – x16 device: (64K + 2K spare) words
◾ Page read/program
   – Random access: 25 µs (max)
   – Sequential access: 25 ns (min)
   – Page program time: 200 µs (typ)
◾ Copy back program mode
◾ Cache read mode
◾ Fast block erase: 2 ms (typ)
◾ Status register
◾ Electronic signature
◾ Chip enable ‘don’t care’
◾ Security features
   – OTP area
   – Serial number (unique ID)
   – Non-volatile protection option
◾ Data protection
   – Hardware block locking
   – Hardware program/erase locked during
      power transitions
◾ ONFI 1.0 support
   – Cache read
   – Read signature
   – Read
◾ Data integrity
   – 100,000 program/erase cycles per block
      (with ECC)
   – 10 years data retention
◾ RoHS compliant packages
◾ Development tools
   – Error correction code models
   – Bad blocks management and wear leveling
      algorithms
   – Hardware simulation models


零件编号
产品描述 (功能)
视图
生产厂家
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PDF
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128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
PDF
STMicroelectronics

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