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N82S19 数据手册 ( 数据表 ) - ETC1

N82S09 image

零件编号
N82S19

产品描述 (功能)

Other PDF
  no available.

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page
4 Pages

File Size
128 kB

生产厂家
ETC1
ETC1 

[Signetics]

DESCRIPTION
The organization of this device allows byte storage of data, including parity. where parity is not monitored, the ninth bit can be used as a tag or status indicator for each word stored. Ideal for scratch-pad, push-down stacks, buffer memories, and other internal memory applications in which cost and performance requirements dictate a wide data path in favor of word depth.


APPLICATIONS
● Buffer memory
● Control register
● FIFO memory
● Push down stacks
● Scratch pad

Page Link's: 1  2  3  4 

零件编号
产品描述 (功能)
视图
生产厂家
64-Bit Inverting-Output Bipolar RAM
PDF
Advanced Micro Devices
32K x 9 Bit Fast Static RAM
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Motorola => Freescale
8K x 9 Bit Fast Static RAM
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Motorola => Freescale
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9 ( Rev : 1995 )
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Integrated Device Technology
CMOS SyncFIFO™ 64 x 9, 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 ( Rev : 2017 )
PDF
Integrated Device Technology
CMOS SyncFIFO™ 64 x 9, 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
PDF
Integrated Device Technology
64-bit TTL bipolar RAM, inverting (3-State)
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Philips Electronics
64 x 8 Cascadable FIFO 64 x 9 Cascadable FIFO
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Cypress Semiconductor
32K x 9 Static RAM
PDF
Cypress Semiconductor
32K x 9 Static RAM
PDF
Cypress Semiconductor

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