RF LDMOS Wideband Integrated Power Amplifiers

The MW7IC2750N wideband integrated circuit is designed with on--chip matching that makes it usable from 2300--2700 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA,
   Pout = 8 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts,
   10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
   on CCDF.
      Power Gain — 26 dB
      Power Added Efficiency — 17%
      Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF
      ACPR @ 8.5 MHz Offset — --49 dBc in 1 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 80 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
• Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 W CW Pout
• Typical Pout @ 1 dB Compression Point ≃ 50 Watts CW

Driver Applications
• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA,
   Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts,
   10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
   on CCDF.
      Power Gain — 26 dB
      Power Added Efficiency — 11%
      Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
      ACPR @ 8.5 MHz Offset — --57 dBc in 1 MHz Channel Bandwidth

FEATUREs
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
• On--Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.