零件编号
MTM55N10
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New Jersey Semiconductor
MTM55N10(V2) 数据手册 ( 数据表 ) - New Jersey Semiconductor
New Jersey Semiconductor
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
These TMOS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C
• Designers Data — IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads
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N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
Motorola => Freescale
TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
Motorola => Freescale
TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
Motorola => Freescale
TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola => Freescale
TMOS V N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface
Motorola => Freescale
TMOS V N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface
Motorola => Freescale
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