MSG33002 数据手册 ( 数据表 ) - Panasonic Corporation
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Panasonic Corporation
SiGe HBT type
For low-noise RF amplifier
■ Features
• Compatible between high breakdown voltage and high cutoff frequency
• Low-noise, high-gain amplification
• Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package
0.8 mm × 1.2 mm (height 0.52 mm)
SiGe HBT type For low-noise RF amplifier
Panasonic Corporation
SiGe HBT type For low-noise RF amplifier
Panasonic Corporation
SiGe HBT type For low-noise RF amplifier
Panasonic Corporation
Microwave, low noise, SiGe NPN HBT
SHIKE Electronics
Low Noise, High Gain SiGe HBT
Unspecified
LOW NOISE, HIGH GAIN SiGe HBT
RF Micro Devices
Low Noise, High Gain SiGe HBT
Sirenza Microdevices => RFMD
Low Noise, High Gain SiGe HBT
Stanford Microdevices
SiGe HBT type Transistors
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RF Transistor for Low Noise Amplifier
ON Semiconductor