DESCRIPTION:
The MS2223 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold metallization and emitter ballasting provides long term reliability under long pulse formats.

FEATUREs
• GOLD METALLIZATION
• EMITTER SITE BALLASTED
• Pout = 70 W MINIMUM
• Gp = 6.7 dB
• OVERLAY GEOMETRY
• METAL/CERAMIC HERMETIC PACKAGE
• LOW THERMAL RESISTANCE