The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 28 volt base station equipment.

• Typical Performance at 945 MHz, 28 Volts
   Output Power — 45 Watts PEP
   Power Gain — 19 dB
   Efficiency — 41% (Two Tones)
   IMD — –31 dBc
• Integrated ESD Protection
• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Dual–Lead Boltdown Plastic Package Can Also Be Used As Surface Mount.
• TO–272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
• TO–270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.