RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

• Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts, IDQ =
   1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,
   Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
   1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
      Power Gain — 13 dB
      Drain Efficiency — 25%
      IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Bandwidth
      ACPR @ 885 kHz Offset — -51 dB in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 110 Watts CW Output Power

FEATUREs
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.