MRF581 数据手册 ( 数据表 ) - New Jersey Semiconductor
生产厂家
New Jersey Semiconductor
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
FEATUREs
• Low Noise - 2.5 dB @ 500 MHZ
• Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective MacroX Package
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technology
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Unspecified
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technology
