Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.
• Guaranteed performance @ 400 MHz, 28 Vdc
Output power = 80 W over 225 to 400 MHz Band
Minimum gain = 7.3 dB @ 400 MHz
• Built–in matching network for broadband operation using
double match technique
• 100% tested for load mismatch at all phase angles with 30:1
VSWR
• Gold metallization system for high reliability applications
• Characterized for 100 =8 500 MHz
The RF Line Controlled “Q” Broadband Power Transistor 100W, 30 to 500MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF Line Controlled “Q” Broadband Power Transistor 125W, 30 to 500MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF Line Controlled “Q” Broadband Power Transistor 125W, 30 to 500MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF Line Controlled “Q” Broadband Power Transistor 100W, 30 to 500MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V
M/A-COM Technology Solutions, Inc.
The Broadband RF TMOS® Line 2W, 500MHz, 28V
M/A-COM Technology Solutions, Inc.
The Broadband RF TMOS® Line 2W, 500MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 80W, 175MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 80W, 175MHz, 28V
Tyco Electronics