The RF TMOS® Line
Power Field Effect Transistor
N–Channel Enhancement Mode

Designed for wideband large–signal amplifier and oscillator applications to 500 MHz.

• Guaranteed 28 Volt, 500 MHz Performance
    Output Power = 2.0 Watts
    Minimum Gain = 16 dB (Min)
    Efficiency = 55% (Typ)
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
• Excellent Thermal Stability, Ideally Suited for Class A Operation