RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment.

• Specified Performance @ 520 MHz, 12.5 Volts
   Output Power — 8 Watts
   Power Gain — 11 dB
   Efficiency — 55%
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• RF Power Plastic Surface Mount Package
• Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request
• N Suffix Indicates Lead-Free Terminations
• Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.