The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.

• Superior High Order IMD
• Specified 50 Volts, 30 MHz Characteristics
    Output Power = 30 Watts
    Power Gain = 18 dB (Typ)
    Efficiency = 40% (Typ)
• IMD(d3) (30 WPEP)  — -35dB(Typ)
• IMD(dii)(30WPEP) — -60dB(Typ)
• 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
• Lower Reverse Transfer Capacitance (3.0 pF Typical)