Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.
• Guaranteed performance @ 1090 MHz, 35 Vdc
Output power = 4.0 W Peak
Minimum gain = 10 dB
• 100% Tested for load mismatch at all phase angles with 10:1 VSWR
• ndustry standard package
• Nitride passivated
• Gold metallized, emitter ballasted for long life and resistance to
metal migration
• Internal input matching for broadband operation
Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz
M/A-COM Technology Solutions, Inc.
Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz
M/A-COM Technology Solutions, Inc.
Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz
M/A-COM Technology Solutions, Inc.
Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz
M/A-COM Technology Solutions, Inc.
Microwave Power Silicon NPN Transistor 30W (peak), 960–1215MHz, 36V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Microwave Power Silicon NPN Transistor 30W (peak), 960–1215MHz, 36V
M/A-COM Technology Solutions, Inc.
Microwave Pulse Power Silicon NPN Transistor 350W (peak), 1025–1150MHz
M/A-COM Technology Solutions, Inc.
Microwave Pulse Power Silicon NPN Transistor 350W (peak), 1025–1150MHz ( Rev : V2 )
M/A-COM Technology Solutions, Inc.