MMBR920L 数据手册 ( 数据表 ) - New Jersey Semiconductor
生产厂家

New Jersey Semiconductor
DESCRIPTION
• Low Noise
NF= 2.4dB TYP. @ f= 500MHz
• High Gain
Gpe= 15dB TYP. @ f= 500MHz
APPLICATIONS
• Designed for thick and thin-film circuits using surface mount
components and requiring low-noise , high-gain signal
amplification at frequencies to 1 GHz.
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
New Jersey Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
New Jersey Semiconductor