MJE802(V2) 数据手册 ( 数据表 ) - Inchange Semiconductor
生产厂家
Inchange Semiconductor
DESCRIPTION
• Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 80 V
• DC Current Gain—
: hFE = 750(Min) @ IC= 1.5A
= 100(Min) @ IC= 4A
• Complement to Type MJE702
APPLICATIONS
• Designed for general-purpose amplifier and low-speed
switching applications
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
