MJE3055T 数据手册 ( 数据表 ) - New Jersey Semiconductor
生产厂家
New Jersey Semiconductor
COMPLEMENTARY SILICON POWER TRANSISTORS
...designed for usein general-purpose amplifier and switching applications
FEATURES:
* Power Dissipation - PD = 75 W © Tc = 25°C
* DC Current Gain hFE = 20- 100 © lc = 4.0 A
* vCE(isrt) = 1-1 V (Max.) © lc = 4.0 A, IB= 400 mA
SILICON COMPLEMENTARY POWER TRANSISTORS
Central Semiconductor Corp
POWER COMPLEMENTARY SILICON TRANSISTORS
Comset Semiconductors
Complementary Silicon Power Transistors ( Rev : 2007 )
ON Semiconductor
Complementary Silicon Power Transistors ( Rev : 2014 )
ON Semiconductor
Complementary Silicon Power Transistors
New Jersey Semiconductor
Complementary Silicon Power Transistors ( Rev : 2011 )
ON Semiconductor
Complementary Silicon Power Transistors
ON Semiconductor
Complementary Silicon Power Transistors
ON Semiconductor
Complementary Silicon Power Transistors
ON Semiconductor
Complementary Silicon Power Transistors
Motorola => Freescale
