MJE3055T 数据手册 ( 数据表 ) - Inchange Semiconductor
生产厂家

Inchange Semiconductor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min)
·High DC Current Gain-: hFE= 20-100@IC= 4A
·Complement to Type MJE2955T
APPLICATIONS
·Designed for use in general-purpose amplifier and switching applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor