MJD128 数据手册 ( 数据表 ) - ON Semiconductor
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ON Semiconductor
Complementary Darlington Power Transistor
DPAK For Surface Mount Applications
FEATUREs
Designed for general purpose amplifier and low speed switching applications.
• Monolithic Construction With Built−in Base−Emitter Shunt Resistors
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
• This is a Pb−Free Device
Complementary Darlington Power Transistor
ON Semiconductor
Complementary Darlington Power Transistor ( Rev : 2011 )
ON Semiconductor
Complementary Darlington Power Transistor
ON Semiconductor
COMPLEMENTARY DARLINGTON POWER TRANSISTOR
Semelab - > TT Electronics plc
Complementary Darlington Power Transistor ( Rev : 2012 )
ON Semiconductor
Complementary Darlington Power Transistor ( Rev : 2005 )
ON Semiconductor
Complementary Darlington Power Transistor
ON Semiconductor
COMPLEMENTARY DARLINGTON POWER TRANSISTOR
Semelab - > TT Electronics plc
Complementary Darlington Power Transistor ( Rev : 2005 )
ON Semiconductor
COMPLEMENTARY POWER DARLINGTON ( Rev : V2 )
Comset Semiconductors