MJD112 数据手册 ( 数据表 ) - KEC
生产厂家
KEC
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
• High DC Current Gain.
: hFE=1000(Min.), VCE=4V, IC=1A.
• Low Collector-Emitter Saturation Voltage.
• Straight Lead (IPAK, "L" Suffix)
• Complementary to MJD117/L.
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First Components International
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NPN Epitaxial Planar Transistor
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NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
