零件编号
MJ11029
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Inchange Semiconductor
MJ11029 数据手册 ( 数据表 ) - Inchange Semiconductor
Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage
: V(BR)CEO= -60V(Min.)
• High DC Current Gain-
: hFE= 1000(Min.)@IC= -25A
: hFE= 400(Min.)@IC= -50A
• Complement to Type MJ11028
APPLICATIONS
• Designed for use as output devices in complementary general purpose amplifier applications.
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