MJ11022 数据手册 ( 数据表 ) - Inchange Semiconductor
生产厂家

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V (Min.)
• High DC Current Gain-
: hFE= 400(Min.)@IC= 10A
• Low Collector Saturation Voltage-
: VCE (sat)= 1.0V(Max.)@ IC= 5.0A
APPLICATIONS
• Designed for general purpose amplifiers, low frequency
switching and motor control applications.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon NPN Darlington Power Transistor
Inchange Semiconductor