MGFK33V4045 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC
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MITSUBISHI ELECTRIC
DESCRIPTION
The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 ~ 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
● Internally impedance matched
● Flip-chip mounted
● High output power
P1dB = 2.0W (TYP.) @ f = 14.0 ~ 14.5GHz
● High linear power gain
GLP = 7.0dB (TYP.) @ f = 14.0 ~ 14.5GHz
● High power added efficiency
ηadd = 22% (TYP.) @ f = 14.0 ~ 14.5GHz, P1dB
APPLICATION
For use in 14.0 ~ 14.5 GHz-band amplifiers
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET ( Rev : 2005 )
MITSUBISHI ELECTRIC
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET ( Rev : 2003 )
MITSUBISHI ELECTRIC
14.0 ~ 14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
14.0-14.5GHz, 2W Internally Matched Power FET
Excelics Semiconductor, Inc.
14.0~14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
14.0-14.5GHz, 2W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
MITSUBISHI ELECTRIC
14.0-14.5GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
14.0-14.5GHz, 4W Internally Matched Power FET
Excelics Semiconductor, Inc.