零件编号
MGFC45V5964A
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MGFC45V5964A 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
DESCRIPTION
The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50 ohm system
High output power
P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz
High power gain
GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz
High power added efficiency
P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=34.5dBm S.C.L.
APPLICATION
5.9 - 6.4 GHz band power amplifier
零件编号
产品描述 (功能)
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生产厂家
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
5.9 ~ 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
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