零件编号
MGFC45V5053A
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MGFC45V5053A 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
DESCRIPTION
GaAs power FET especially designed for use in 5.05~5.25 GHz band amplifiers. The hermetically sealed metal-ceramic The MGFC45V5053A is an internally impedance matched package guarantees high reliability.
FEATURES (TARGET)
● Internally matched to 50 (Ω) system
● High output power
P1dB=32W (TYP.) @f=5.05~5.25GHz
● High power gain
GLP=10.0dB (TYP.) @f=5.05~5.25GHz
● High power added efficiency
P.A.E.=33% (TYP.) @f=5.05~5.25GHz
● Low distortion [item -51]
IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.
APPLICATION
5.05~5.25GHz band amplifiers
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10.7 ~ 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1999 )
MITSUBISHI ELECTRIC
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . ( Rev : 1998 )
MITSUBISHI ELECTRIC
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