零件编号
MGFC41V3642
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MITSUBISHI ELECTRIC
DESCRIPTION
The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 ~ 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability.
FEATURES
● Class A operation
● Internally matched to 50Ω system
● High output power
P1dB = 14W (TIP.) @ f=3.6 - 4.2 Hz
● High power gain
GLP = 12.5 dB (TYP.) @ f=3.6 - 4.2 GHz
● High power added efficiency
nadd = 40 % (TYP.) @ f=3.6 - 4.2 GHz, P1db
● Hermetically sealed metal-ceramic package
● Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.
APPLICATION
item 01 : 3.6 - 4.2 GHz band power amplifier
item 51 : Digital radio communication