零件编号
MGFC36V7785A_04
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MGFC36V7785A_04 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
DESCRIPTION
The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 4W (TYP.) @ f=7.7~8.5GHz
High power gain
GLP = 8 dB (TYP.) @ f=7.7~8.5GHz
High power added efficiency
P.A.E. = 29 % (TYP.) @ f=7.7~8.5GHz
Low distortion [ item -51 ]
IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.
APPLICATION
item 01 : 7.7~8.5 GHz band power amplifier
item 51 : 7.7~8.5 GHz band digital radio communication
零件编号
产品描述 (功能)
视图
生产厂家
7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
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