MG100J1ZS40 数据手册 ( 数据表 ) - Toshiba
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High Power Switching Applications
Motor Control Applications
● High input impedance
● High spee : tf = 0.35µs (max)
trr = 0.15µs (max)
● Low saturation voltage : VCE (sat) = 3.5V (max)
● Enhancement-mode
● The electrodes are isolated from case.
TOSHIBA GTR Module Silicon N Channel IGBT ( Rev : 1997 )
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TOSHIBA GTR Module Silicon N Channel IGBT
Toshiba
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Toshiba
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
Toshiba
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
Toshiba