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MBRS240LT3G(2008) 数据手册 ( 数据表 ) - ON Semiconductor

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零件编号
MBRS240LT3G

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4 Pages

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ONSEMI
ON Semiconductor 

Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.


FEATUREs
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Overvoltage Protection
• Low Forward Voltage Drop
• Pb−Free Package is Available

Mechanical Characteristics
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 95 mg (Approximately)
• Cathode Polarity Band
• Maximum Temperature of 260°C/10 Seconds for Soldering
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable


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