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MBRAF1100T3G 数据手册 ( 数据表 ) - ON Semiconductor

MBRAF1100T3G image

零件编号
MBRAF1100T3G

产品描述 (功能)

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4 Pages

File Size
99 kB

生产厂家
ONSEMI
ON Semiconductor 

Schottky Power Rectifier
Surface Mount Power Package

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state−of−the−art devices have the following features:


FEATUREs
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• High Blocking Voltage − 100 V
• 150°C Operating Junction Temperature
• Guardring for Stress Protection
• This is a Pb−Free Device

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
   260°C Max. for 10 Seconds
• Shipped in 12 mm Tape and Reel, 5000 Units per Reel
• Cathode Polarity Band


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