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MBR2030CTLG 数据手册 ( 数据表 ) - ON Semiconductor

MBR2030CTLG image

零件编号
MBR2030CTLG

Other PDF
  2004  

PDF
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page
5 Pages

File Size
75.5 kB

生产厂家
ONSEMI
ON Semiconductor 

Features and Benefits
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C)
• High Junction Temperature
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Low Power Loss/High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• This Device is Pb−Free and is RoHS Compliant*


APPLICATIONs
• Power Supply − Output Rectification
• Power Management − ORING
• Instrumentation

Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Sec
• ESD Rating: Human Body Model 3B
                       Machine Model C


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