
ON Semiconductor
Features and Benefits
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C)
• High Junction Temperature
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Low Power Loss/High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• This Device is Pb−Free and is RoHS Compliant*
APPLICATIONs
• Power Supply − Output Rectification
• Power Management − ORING
• Instrumentation
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Sec
• ESD Rating: Human Body Model 3B
Machine Model C