MAPLST2122-030CF 数据手册 ( 数据表 ) - M/A-COM Technology Solutions, Inc.
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M/A-COM Technology Solutions, Inc.
LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V
Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz frequency band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.
• 30W output power at P1dB (CW)
• 12dB minimum gain at P1dB (CW)
• W-CDMA typical performance: (28VDC, -45dBc ACPR @ 4.096MHz)
Output power: 4.5W (typ.)
Gain: 12dB (typ.)
Efficiency: 16% (typ.)
• 10:1 VSWR ruggedness (CW @ 30W, 28V, 2110MHz)
LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz
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RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 30W, 28V
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RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V
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RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 15W, 28V
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LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz
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LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz
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LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz ( Rev : 2003 )
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LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
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LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz
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