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M5M4V16G50DFP-12 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC

M5M4V16G50DFP-10 image

零件编号
M5M4V16G50DFP-12

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page
33 Pages

File Size
125 kB

生产厂家
Mitsubishi
MITSUBISHI ELECTRIC  

DESCRIPTION
The M5M4V16G50DFP is a 2-bank x 262,144-word x 32-bit Synchronous GRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V16G50DFP can operate at frequencies of 100+ MHz. The BLOCK WRITE and WRITE-PER-BIT functions provide improved performance in graphic memory systems


FEATURES
- Single 3.3v±0.3v power supply
- Clock frequencies of 125 MHz
- Fully synchronous operation referenced to clock rising edge
- Dual bank operation controlled by A10(Bank Address)
- Internal pipelined operation: column address can be changed every clock cycle
- Programmable /CAS Latency (LVTTL: 2 and 3)
- Programmable Burst Length (1/2/4/8 and Full Page)
- Programmable Burst Type (Sequential / Interleave)
- Byte control using DQM0 - DQM3 signals in both read and write cycles
- Persistent Write-Per-Bit (WPB) function
- 8 Column Block Write (BW) function
- Auto Precharge / All bank precharge controlled by A9
- Auto Refresh and Self Refresh Capability
- 2048 refresh cycles /32ms
- LVTTL Interface
- 100 pin QFP package with 0.65mm lead pitch

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