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M5M29F25611VP 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC

M5M29F25611VP image

零件编号
M5M29F25611VP

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36 Pages

File Size
493.6 kB

生产厂家
Mitsubishi
MITSUBISHI ELECTRIC  

DESCRIPTION
The MITSUBISHI M5M29F25611 is a CMOS Flash Memory with AND type multi-level memory cells.
It has fully automatic programming and erase capabilities with a single 3.3V power supply.
The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048+64) bytes.
Available sectors of M5M29F25611 are more than 16,057(98% of all sector address) and less than 16,384 sectors.


FEATURES
● On-board single power supply(Vcc) : Vcc=3.0V to 3.6V
● Organization
    AND Flash Memory : (2048+64)bytes x (More than 16,057 sectors)
    Data register : (2048+64)bytes
● Multi-level memory cell: 2bit / per memory cell.
● Automatic programming : Sector program time : 2.5 ms typ.
    System bus free Address,data latch function
    Internal automatic program verify function
    Status data polling function
● Automatic erase : Single sector erase time : 1.0 ms typ.
    System bus free Internal automatic erase verify function
    Status data polling function
● Erase mode : Single sector erase ((2048+64)byte unit)
● Fast access time : Serial read First access time : 50µs max. Serial access time : 50ns max.
● Low power dissipation :
    ICC2 = 30mA typ. / 50mA max. (Read)
    ISB2 = 30µA typ. / 50µA max. (Standby)
    ICC3 = 20mA typ. / 40mA max. (Program)
    ICC4 = 20mA typ. / 40mA max. (Erase)
    ISB3 = 1µA typ. / 10µA max. (Deep standby)
● Package : 48pin-TSOP(I) (12.0 x 20.0mm2)

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零件编号
产品描述 (功能)
视图
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