DESCRIPTION
This is a family of 65 536-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large0capacity memory systems where high speed, low power dissipation, and low costs are essential.
APPLICATIONS
● Main memory unit for computers
● Refresh memory for CRT
65/536-bit/32/768-bit 2-WIRE SERIAL CMOS EEPROM
Integrated Silicon Solution
4,194,304-word × 1-bit Dynamic RAM
Hitachi -> Renesas Electronics
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MITSUBISHI ELECTRIC
2,147,483,648-BIT ( 33,554,432-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
MITSUBISHI ELECTRIC
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MITSUBISHI ELECTRIC
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MITSUBISHI ELECTRIC
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MITSUBISHI ELECTRIC
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MITSUBISHI ELECTRIC
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MITSUBISHI ELECTRIC
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MITSUBISHI ELECTRIC