M02N60 数据手册 ( 数据表 ) - STANSON TECHNOLOGY
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STANSON TECHNOLOGY
FEATURE
Robust High Voltage Temination.
Avalanche Energy Specified
Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circurits
IDSS and VDS(on) Specified at Elevated Temperature
2.0A, 600V N-CHANNEL POWER MOSFET ( Rev : 2021 )
Unisonic Technologies
N-Channel MOSFET 400V, 2.0A, 3.4Ω
MagnaChip Semiconductor
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
Intersil
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
Intersil
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET
Intersil
2.0A RECTIFIER ( Rev : RevB-2 )
Diodes Incorporated.
2.0A SUPERFAST RECTIFIER
Zibo Seno Electronic Engineering Co.,Ltd
2.0A SUPERFAST RECTIFIER
Zibo Seno Electronic Engineering Co.,Ltd
2.0A SUPERFAST DIODE
Won-Top Electronics
2.0A Power Rectifier
SANYO -> Panasonic