LNA2802L 数据手册 ( 数据表 ) - Panasonic Corporation
生产厂家

Panasonic Corporation
GaAs Infrared Light Emitting Diode
For optical control systems
FEATUREs
● High-power output, high-efficiency : PO = 5 mW (typ.)
● Emitted light spectrum suited for silicon photodetectors :
λP = 940 nm (typ.)
● Good radiant power output linearity with respect to input current
● Long lifetime, high reliability
● ø3 plastic package
GaAs Infrared Light Emitting Diode
Panasonic Corporation
GaAs Infrared Light Emitting Diode
Panasonic Corporation
GaAs Infrared Light Emitting Diode
Panasonic Corporation
GaAs Infrared Light Emitting Diode ( Rev : Old_V )
Panasonic Corporation
GaAs Infrared Light Emitting Diode
Panasonic Corporation
GaAs Infrared Light Emitting Diode
Panasonic Corporation
GaAs Infrared Light Emitting Diode
Panasonic Corporation
GaAs Infrared Light Emitting Diode
Panasonic Corporation
GaAs Infrared Light Emitting Diode
Panasonic Corporation
GaAs Infrared Light Emitting Diode
Panasonic Corporation