LN66A(2009) 数据手册 ( 数据表 ) - Panasonic Corporation
生产厂家

Panasonic Corporation
GaAs Infrared Light Emitting Diode
For optical control systems
■ Features
• High-power output, high-efficiency: Ie = 9 mW/sr (min.)
• Emitted light spectrum suited for silicon photodetectors
• Good radiant power output linearity with respect to input current
• Wide directivity: θ = 20° (typ.)
• Transparent epoxy resin package
• Long lead wire type
Infrared Light Emitting Diodes
Panasonic Corporation
Infrared Light Emitting Diodes
Panasonic Corporation
Infrared Light Emitting VCSEL
TT Electronics.
Infrared Light Emitting VCSEL
Optek Technology
Infrared Light Emitting Diode
Optek Technology
Infrared Light Emitting Diode
Roithner LaserTechnik GmbH
Infrared Light Emitting Diode
TT Electronics.
Infrared Light Emitting Diode ( Rev : 2008 )
TT Electronics.
Infrared Light Emitting Diode ( Rev : 2007 )
Optek Technology
Light Emitting Diodes
Panasonic Corporation