零件编号
LN55
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Panasonic Corporation
LN55 数据手册 ( 数据表 ) - Panasonic Corporation
Panasonic Corporation
GaAs Infrared Light Emitting Diode
For optical control systems
FEATUREs
● High-power output, high-efficiency : PO = 3.5 mW (typ.)
● Suited for use with silicon photodetectors
● Infrared light emission close to monochromatic light : λP = 950 nm (typ.)
● High-speed modulation capability
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