LN4812LT1G 数据手册 ( 数据表 ) - Leshan Radio Company,Ltd
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Leshan Radio Company,Ltd
VDS= 30V
RDS(ON), Vgs@10V, Ids@6 A = 38mΩ
RDS(ON), Vgs@4.5V, Ids@5A = 52mΩ
FEATUREs
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current Handling Capability
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
30V N-Channel Enhancement Mode MOSFET
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Shanghai Leiditech Electronic Technology Co., Ltd
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Cystech Electonics Corp.
30V N-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 1999 )
Zetex => Diodes
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Zetex => Diodes
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZP Semiconductor
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.