LN175 数据手册 ( 数据表 ) - Panasonic Corporation
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Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
For optical control systems
FEATUREs
● High-power output, high-efficiency : PO = 12 mW (typ.)
● Emitted light spectrum suited for silicon photodetectors :
λP = 900 nm (typ.)
● Good radiant power output linearity with respect to input current
● Wide directivity : θ = 120 deg. (typ.)
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation
GaAlAs Infrared Light Emitting Diode
Panasonic Corporation