General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

FEATUREs
   VDS                                  80V
   ID (at VGS=10V)              100A
   RDS(ON) (at VGS=10V)  3.2mΩ(Typ)