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LE25S20MB-AH(2017) 数据手册 ( 数据表 ) - ON Semiconductor

LE25S20MB image

零件编号
LE25S20MB-AH

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24 Pages

File Size
258.2 kB

生产厂家
ONSEMI
ON Semiconductor 

Overview
The LE25S20MB is a SPI bus flash memory device with a 2M bit (256K x 8-bit) configuration. It uses a single 1.8 V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S20MB is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S20MB also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.


FEATUREs
• Read/write operations enabled by single 1.8 V power supply :
   1.65 to 1.95 V supply voltage range
• Operating frequency : 40 MHz
• Temperature range : -40 to +85°C
• Serial interface : SPI mode 0, mode 3 supported
• Sector size : 4K bytes/small sector, 64K bytes/sector
• Small sector erase, sector erase, chip erase functions
• Page program function (256 bytes/page)
• Block protect function
• Highly reliable read/write
   Number of rewrite times : 100,000 times
   Small sector erase time : 40 ms (typ), 150 ms (max)
   Sector erase time : 80 ms (typ), 250 ms (max)
   Chip erase time : 300 ms (typ), 3.0 s (max)
   Page program time : 3.0 ms / 256 bytes (typ), 3.5 ms / 256 bytes (max)
• Status functions : Ready / busy information, protect information
• Data retention period : 20 years
• Package : SOP8K (200 mil)


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