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L6391D 数据手册 ( 数据表 ) - STMicroelectronics

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零件编号
L6391D

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24 Pages

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1.1 MB

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ST-Microelectronics
STMicroelectronics 

Description
The L6391 is a high-voltage device manufactured with the BCD “OFF-LINE” technology. It is a single chip half-bridge gate driver for N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP. An integrated comparator is available for
protections against overcurrent, overtemperature, etc.


FEATUREs
• High voltage rail up to 600 V
• dV/dt immunity ± 50 V/nsec in full temperature range
• Driver current capability:
– 290 mA source
– 430 mA sink
• Switching times 75/35 nsec rise/fall with 1 nF load
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• Integrated bootstrap diode
• Comparator for fault protections
• Smart shutdown function
• Adjustable deadtime
• Interlocking function
• Compact and simplified layout
• Bill of material reduction
• Effective fault protection
• Flexible, easy and fast design

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零件编号
产品描述 (功能)
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