KTD2060 数据手册 ( 数据表 ) - Inchange Semiconductor
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Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
• Collector Power Dissipation-
: PC= 25W@ TC= 25℃
• Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 0.3A)
• Complement to Type KTB1368
APPLICATIONS
• Designed for general purpose applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor