Features
Low on-state resistance
N-channel  RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 3 A)
               RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 3 A)
P-channel  RDS(on)1 = 60 mΩ MAX. (VGS = -10 V, ID = -3 A)
               RDS(on)2 = 80 mΩ MAX. (VGS = -4.5 V, ID = -3 A)
Low input capacitance
N-channel Ciss = 500 pF TYP.
P-channel Ciss = 460 pF TYP.
Built-in gate protection diode
Small and surface mount package