K3567 数据手册 ( 数据表 ) - Toshiba
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Switching Regulator Applications.
2SK3567 -> Marking K3567.
• Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.)
• High forward transfer admittance: |Yfs| = 2.5 S (typ.)
• Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
