DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES
• Low On-State Resistance
   RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A)
   RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A)
• Low Ciss : Ciss = 2100 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package