零件编号
K3176
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Toshiba
K3176 数据手册 ( 数据表 ) - Toshiba
Toshiba
Switching Regulator, DC-DC Converter and Motor Drive Applications.
• Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 30 S (typ.)
• Low leakage current: IDSS = 100 mA (max) (VDS = 200 V)
• Enhancement-mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π −MOS V) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π −MOS V) ( Rev : 2006 )
Toshiba
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