K2607(1998) 数据手册 ( 数据表 ) - Toshiba
生产厂家

Toshiba
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS
CHOPPER REGULATOR, DC−DC CONVERTER AND MOTOR DRIVE APPLICATIONS
• Low Drain−Source ON Resistance : RDS (ON) = 1.0 Ω (Typ.)
• High Forward Transfer Admittance : |Yfs|= 7.0 S (Typ.)
• Low Leakage Current : IDSS = 100 μA (Max.) (VDS = 640 V)
• Enhancement-Mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 1998 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2004 )
Toshiba